BYT230PIV-1000 byt231piv-1000 ? august 1996 - ed : 2a fast recovery rectifier diodes very low reverse recovery time very low switching losses low noise turn-off switching insulated package : insulating voltage = 2500 v rms capacitance = 45 pf description features dual high voltage rectifiers suited for switch mode power supplies and other power converters. the devices are packaged in isotop. isotop tm (plastic) symbol parameter value unit v rrm repetitive peak reverse voltage 1000 v i frm repetitive peak forward current tp 10 m s 375 a i f(rms) rms forward current per diode 70 a i f(av) average forward current tc=55 c d = 0.5 per diode 30 a i fsm surge non repetitive forward current tp=10ms sinusoidal per diode 200 a tstg tj storage and junction temperature range - 40 to + 150 - 40 to + 150 c c tm : isotop is a trademark of sgs-thomson microelectronics . absolute maximum ratings k2 a2 a1 k1 byt231piv-1000 a2 k1 a1 k2 BYT230PIV-1000 1/5
symbol test conditions min. typ. max. unit v f* tj = 25 ci f =30a 1.9 v t j =100 c 1.8 i r ** t j =25 cv r =v rrm 100 m a t j =100 c 5ma pulse test : * tp = 380 m s, duty cycle < 2 % ** tp = 5 ms, duty cycle < 2 % electrical characteristics (per diode) static characteristics symbol test conditions min. typ. max. unit trr t j =25 ci f = 0.5a i r =1a irr = 0.25a 70 ns i f =1a v r = 30v di f /dt = -15a/ m s 165 recovery characteristics symbol parameter value unit rth (j-c) junction to case per diode 1.5 c/w total 0.8 rth (c) coupling 0.1 c/w when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode) x rth(per diode) + p(diode 2) x rth(c) thermal resistance symbol test conditions min. typ. max. unit t irm di f /dt = -120a/ m sv cc =200v i f = 30a lp 0.05 m ht j =100 c see fig. 11 200 ns di f /dt = -240a/ m s 120 i rm di f /dt = -120a/ m s 19.5 a di f /dt = -240a/ m s 22 turn-off switching characteristics (without serie inductance) symbol test conditions min. typ. max. unit c = v rp v cc t j =100 cv cc = 200v i f =i f(av ) di f /dt = -30a/ m slp = 5 m h see fig.12 4.5 / to evaluate the conduction losses use the following equation : p = 1.47 x i f(av) + 0.010 x i f 2 (rms) turn-off overvoltage coefficient (with serie inductance) ? BYT230PIV-1000 / byt231piv-1000 2/5
fig.2 : peak current versus form factor. fig.3 : non repetitive peak surge current versus overload duration. fig.4 : relative variation of thermal impedance junction to case versus pulse duration. 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig.1 : low frequency power losses versus average current. fig.6 : recovery charge versus di f /dt. fig.5 : voltage drop versus forward current. ? BYT230PIV-1000 / byt231piv-1000 3/5
fig.7 : recovery time versus di f /dt. fig.8 : peak reverse current versus dif/dt. fig.10 : dynamic parameters versus junction temperature. fig.9 : peak forward voltage versus di f /dt. fig.11 : turn-off switching characte- ristics (without serie inductance) fig.12 : turn-off switching characte- ristics (with serie inductance) lc dut vcc if vf irm vcc tirm dif/dt lc dut vcc lp if vf vrp vcc dif/dt ? BYT230PIV-1000 / byt231piv-1000 4/5
package mechanical data isotop screw version cooling method : c marking : type number weight : 28 g (without screws) electrical isolation : 2500v (rms) capitance : < 45 pf inductance : < 5 nh k l g m o oj / oi / oi / h b a d ef sc re w h m4 c p ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 b 8.90 9.10 0.350 0.358 c 1.95 2.05 0.077 0.081 d 0.75 0.85 0.029 0.034 e 12.60 12.80 0.496 0.504 f 25.10 25.50 0.988 1.004 g 31.50 31.70 1.240 1.248 h 4.00 0.157 i 4.10 4.30 0.161 0.169 j 4.10 4.30 0.161 0.169 k 14.90 15.10 0.586 0.595 l 30.10 30.30 1.185 1.193 m 37.80 38.20 1.488 1.504 o 7.80 8.20 0.307 0.323 p 5.50 0.216 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1996 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. - recommended torque value : 1.3 n.m (max 1.5 n.m) for the 6 x m4 screws. (2 x m4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version). - the screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. ? BYT230PIV-1000 / byt231piv-1000 5/5
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